fqp8n60/FQPF8N60 600v n-channel mosfet features 7.5a,600v,rds(on)=1.0 ? @vgs=10v low gate charge low c rss (typical 23pf) fast switching 100% avalanchetested improved dv/dt capability rohs product general description this power mosfet is prod uced using aoke?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characte ristics. these devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic la mp ballasts based on half bridge topology. absolute maximum ratings symbol parameter fqp8n60 FQPF8N60 units vdss drain to source voltage 600 v continuous drain current(@tc = 25c) 7.5 7.5* a id continuous drain current(@tc = 100c) 4.4 4.4* a idm drain current pulsed (note 1) 28 28* a vgs gate to source voltage 30 v eas single pulsed avalanche energy (note 2) 420 mj ear repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns total power dissipation(@tc = 25 c) 147 48 w pd derating factor above 25 c 1.18 0.38 w/ c tstg, tj operating junction temperature & storage temperature -55 ~ 150 c tl maximum lead temperature for solderi ng purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter fqp8n60 FQPF8N60 units r jc thermal resistance, junction-to-case 0.85 2.6 c/w r cs thermal resistance, case-to-sink typ 0.5 0.5 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w 1/7
fqp8n60/FQPF8N60 electrical characteristics ( tc = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c - 0.65 - v/c v ds = 600v, v gs = 0v - - 10 ua i dss drain-source leakage current v ds = 480v, t c = 125 c - - 100 ua gate-source leakage, forward v gs = 30v, v ds = 0v - - 100 na i gss gate-source leakage, reverse v gs = -30v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 3.75a - 1.0 1.2 ? dynamic characteristics c iss input capacitance - 1380 1800 c oss output capacitance - 115 150 c rss reverse transfer capacitance v gs =0 v, v ds =25v, f = 1mhz - 23 30 pf switching characteristics t d(on) turn-on delay time - 30 70 t r rise time - 80 170 t d(off) turn-off delay time - 125 260 t f fall time v dd =300v, i d =7.5a, r g =25 ? (note 4, 5) - 85 180 ns q g total gate charge - 40 48 q gs gate-source charge - 6 - q gd gate-drain charge(miller charge) v ds =480v, v gs =10v, i d =7.5a (note 4, 5) - 20 - nc drain-source diode ratings and characteristics symbl parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction - - 7.5 i sm pulsed source current diode in the mosfet - - 28 a v sd diode forward voltage i s =7.5a, v gs =0v - - 1.4 v t rr reverse recovery time i s =7.5a, v gs =0v,di f /dt=100a/us - 415 - ns q rr reverse recovery charge i s =7.5a, v gs =0v,di f /dt=100a/us - 4.6 - uc notes 1. pulse width limited by maximum junction temperature 2. l = 15.7mh, i as =7.5a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 7.5a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature 2/7
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